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| Semiconductor SW3318-G / SW3318-G(B) High Brightness LED Lamp Features * Colorless transparency lens type * 3mm(T-1) all plastic mold type * White emission color : X=0.22~0.36 Y=0.22~0.36 * Viewing angle : 22o * Super luminosity Outline Dimensions STRAIGHT TYPE 3.00.2 unit : mm STOPPER TYPE 3.00.2 4.10.2 2.90.2 2.90.2 4.10.2 5.50.5 0.4 23.0 MIN 0.4 23.0 MIN 1.0 MIN 2.54 NOM 3.60.2 2.54 NOM 1.0 MIN 12 12 3.60.2 3.80.2 3.80.2 PIN Connections 1.Anode 2.Cathode KLW-3001-000 1 SW3318-G / SW3318-G(B) Absolute maximum ratings Characteristic Power Dissipation Forward Current * Peak Forward Current Reverse Voltage Operating Temperature Storage Temperature * Soldering Temperature 2 1 Symbol PD IF IFP VR Topr Tstg Tsol Ratings 85 20 50 4 -2585 -30100 260 for 5 seconds Unit mW mA mA V *1.Duty ratio = 1/16, Pulse width = 0.1ms *2.Keep the distance more than 2.0mm from PCB to the bottom of LED package Recommend document -. LED is very sensitive to ESD. Electrical Characteristics Characteristic Forward Voltage * Luminous Intensity *3Chromaticity Coordinates Reverse Current * Half angle 4 5 Symbol VF IV X Y IR 1/2 Test Condition IF= 20mA IF= 20mA IF= 20mA VR=4V IF= 20mA Min. 0.21 0.19 - Typ. 3.4 500 45 Max. 4.2 0.29 0.33 40 - Unit V mcd uA deg *3. The chromaticity coordinates are derived from the CIE 1931 Chromaticity Diagram and represent the perceived color of the device. *4. 1/2 is the off-axis angle where the luminous intensity is 1/2 the peak intensity *5. Luminous Intensity Maximum tolerance for each Grade Classification limit is 18% *5. Luminous Intensity classification N O P 230~350 350~520 520~780 KLW-3001-000 2 SW3318-G / SW3318-G(B) Characteristic Diagrams Fig. 1 IF - VF Fig. 2 IV - IF Forward Voltage VF [V] Luminous Intensity Iv [mcd] Forward Current IF [mA] Forward Current IF [mA] Fig. 3 IF - Ta Fig.4 Spectrum Distribution Current IF [mA] Forward Ambient Temperature Ta [] Relative Intensity [%] Wavelength [nm] Fig. 5 Radiation Diagram Relative Luminous Intensity Iv [%] KLW-3001-000 3 1. ESD(Electro Static Discharge) : Chip Al2o3 (Sapphire: ) Chip Damage VF Down 2. ESD 2-1. ESD (Electro Static Discharge) : (+) (-) ( , , , ) (-) (+) (+) (-) . : , , , , , : , , , , : , . 2-2. -. . 80% . (10%~20%) (65%~90%) Table 6[KV] 0.1[KV] 7[KV] 0.6[KV] 20[KV] 1.2[KV] -. -. : Wrist Strap ( ), Heel Grounder, , , , -. Conveyer Table : Conductive Floor Mat ESD . KLW-3001-000 4 SW3318-G / SW3318-G(B) These AUK products are intended for usage in general electronic equipments(Office and communication equipment, measuring equipment, domestic electrification, etc.). Please make sure that you consult with us before you use these AUK products in equipments which require high quality and/or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, traffic signal, combustion central, all types of safety device, etc.). AUK cannot accept liability to any damage which may occur in case these AUK products were used in the mentioned equipments without prior consultation with AUK. KLW-3001-000 5 |
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